SIMS, RBS, ion channelling, and TEM studies of the low energy SIMOX structures-Reference-Cited by-同舟云学术

SIMS, RBS, ion channelling, and TEM studies of the low energy SIMOX structures

Published:1992-02 Issue:1-4 Volume:64 Page:750-755
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Li Y.,Kilner J.A.,Hemment P.L.F.,Robinson A.K.,Zhang J.P.,Reeson K.J.,Marsh C.D.,Booker G.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

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2. Role of point defects on B diffusion in Ge;Materials Science in Semiconductor Processing;2012-12

5. SIMOX: processing, layer parameters design, and defects control;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05