Analysis of defects in weakly damaged GaAs by Monte Carlo channeling simulation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. High Energy Ion Beam Analysis of Solids;Götz,1988
2. Defects in Weakly Damaged Ion-Implanted GaAs and Other III–V Semiconductors
3. Investigation of defects in weakly damaged ion implanted GaAs layers
4. Surface studies ofAIIIBVcompound semiconductors by ion channeling
5. Monte Carlo Channeling Calculations
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1. Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities;Applied Physics Letters;2013-10-21
2. Virtues and pitfalls in structural analysis of compound semiconductors by the complementary use of RBS/channeling and high resolution X-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. Strain and compositional profile determination in ion bombarded heterostructures by the complementary use of RBS/channeling and high resolution X-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05
4. DEFECT TRANSFORMATIONS AT LOW TEMPERATURES IN AlxGa1-xAs COMPOUND SEMICONDUCTORS;Modern Physics Letters B;2001-12-20
5. Low temperature transformations of defects in GaAs and AlGaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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