Modeling of concentration profiles from very high dose ion implantation-Reference-Cited by-同舟云学术

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Modeling of concentration profiles from very high dose ion implantation

Published:1989-03 Issue:1-4 Volume:39 Page:7-10
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bunker S.N.,Armini A.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

2. Fatigue and wear of metalloid-ion-implanted metals

3. Microscopic processes accompanying A1+-ion implantation of nickel

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