Recent improvements in double charged ion beam energy purity for serial process ion implanters-Reference-Cited by-同舟云学术

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Recent improvements in double charged ion beam energy purity for serial process ion implanters

Published:1987-01 Issue:1-4 Volume:21 Page:400-404
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kalbfus C.R.,Milgate R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. A twin-well CMOS process employing high-energy ion implantation

2. Proc. Fifth Int. Conf. on Ion Implantation Equipment and Techniques;Spinelli,1984

3. Proc. Fifth Int. Conf. on Ion Implantation Equipment and Techniques;Rose,1984

4. Ion Implantation Techniques;Ryding,1982

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of secondary ion mass spectrometry characterization of contamination associated with ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07

2. Process Control Issues in the Varian E1000 High Current Implanter;Ion Implantation Technology–92;1993

3. A Novel Approach for Quantifying Contamination in Multiply Charged Implantation;Japanese Journal of Applied Physics;1992-04-15

4. Ion beam system design for ULSI device requirements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

5. Evidence from SIMS of Doubly-Charged Boron Contamination During Singly Charged-Ion Implantation;Proceedings, annual meeting, Electron Microscopy Society of America;1990-08-12

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