XP series high current ion implantation systems for up to 200 mm wafer processing-Reference-Cited by-同舟云学术

XP series high current ion implantation systems for up to 200 mm wafer processing

Published:1987-01 Issue:1-4 Volume:21 Page:245-250
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Thayer R.Bruce

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. 5th Int. Conf. on Ion Implantation Equipment and Techniques;Liebert,1985

2. these Proceedings Ion Implantation Technology;Jost,1987

3. presented at this Conference Ion Implantation Technology;Basra,1986

4. these Proceedings Ion Implantation Technology;Eddy,1987

5. these Proceedings Ion Implantation Technology;Wonson,1987

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1. Freeman ion source: An overview (invited);Review of Scientific Instruments;1992-04

2. The NV-10SD high-current ion implantation system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

3. Nonintrusive position measurement of magnetically scanned ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

4. New development in ion implantation and RTP equipment for high productivity;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

5. Design of accelerators for ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-04