Sputtering yield and atomic mixing calculation of 200 Å thick Cu film bombarded by 180 keV Ar ions-Reference-Cited by-同舟云学术

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Sputtering yield and atomic mixing calculation of 200 Å thick Cu film bombarded by 180 keV Ar ions

Published:1989-04 Issue: Volume:40-41 Page:293-295
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Goktepe O.F.,Treado P.A.,Lambert J.M.,Vincenz A.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Computer Simulation of Sputtering

2. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation

3. Monte-Carlo calculation of low energy ion collection in the presence of sputtering, range shortening, knock-on and diffusion

4. Sputtering studies with the Monte Carlo Program TRIM.SP

5. Evolve, a time-dependent monte carlo code to simulate the effects of ion-beam-induced atomic mixing

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