Range parameters of heavy ions implanted into Be films
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon
2. Ranges and range theories
3. Z1-oscillations in low-energy heavy-ion ranges
4. Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments
5. Ion Implantation Techniques;Biersack,1982
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