Ion beams in semiconductor physics and technology-Reference-Cited by-同舟云学术

Ion beams in semiconductor physics and technology

Published:1992-01 Issue:1-2 Volume:63 Page:1-13
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kalbitzer S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

1. Proc. 1st Int. Conf. on Ion Implantation in Semiconductors,1972

2. Proc. 1st Int. Conf. on Ion Beam Analysis,1974

4. EC Solar Programme;Spear;Final Report on Contract ESC/003/UK/D,1984

5. Proc. Conf. on Special Techniques and Materials for Semiconductor Detectors;Kalbitzer,1969

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2. Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

3. Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01