Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Ion beams in semiconductor physics and technology
2. MeV implantation into semiconductors
3. Gold and platinum accumulation on buried defects in silicon
4. Kinetics and thermodynamics constraints in Pt gettering by P diffusion in Si
5. Efficiency and thermal stability of Pt gettering in crystalline Si
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Luminescence fromβ−FeSi2precipitates in Si. I. Morphology and epitaxial relationship;Physical Review B;2002-08-21
2. Proximity gettering of platinum in silicon following implantation with alpha particles at low doses;Materials Science and Engineering: B;2000-02
3. The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600°C following 2-MeV electron irradiation;Materials Science and Engineering: B;1999-12
4. Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
5. The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses;Applied Physics Letters;1999-05-31
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