Growth and decay kinetics of defect centers in high-purity fused silicas irradiated at 77 K with X-Rays or 6.4-eV laser light
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2
2. Oxygen vacancy model for the E1′ center in SiO2
3. Interaction of hydrogenated molecules with intrinsic defects in a-SiO2
4. Oxygen-associated trapped-hole centers in high-purity fused silicas
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