Ultra-shallow junction formation in silicon using ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. An Improved Approach to Accurately Model Shallow B and BF 2 Implants in Silicon
3. Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon
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5. An Algorithm for Least-Squares Estimation of Nonlinear Parameters
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