XTEM and IR absorption analysis of silicon carbide prepared by high temperature carbon implantation in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. FORMATION OF SiC IN SILICON BY ION IMPLANTATION
2. Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon
3. High‐temperature ion beam synthesis of cubic SiC
4. Ion Beam Processes in Advanced Electronic Materials and Device Technology;Kroko,1985
5. Investigation of the formation of Si and SiC crystalline phases in room temperature C+ implanted Si
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1. Formation of SiC Thin Films by Ion Beam Synthesis;Silicon Carbide;2004
2. Formation of tubular silicon carbide from a carbon–silica material by using a reactive replica technique: infra-red characterisation;Applied Surface Science;2003-04
3. High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Plasma immersion ion implantation of nitrogen in Si: formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects;Surface and Coatings Technology;2001-02
5. Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-05
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