Backscattering analysis of thin SiO2 films on Si using 16O(α,α)16O 3.045 MeV resonance-Reference-Cited by-同舟云学术

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Backscattering analysis of thin SiO2 films on Si using 16O(α,α)16O 3.045 MeV resonance

Published:1996-09 Issue:1-4 Volume:118 Page:228-232
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Watamori Michio,Oura Kenjiro,Hirao Takashi,Sasabe Kaoru

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Analysis of the composition of surface layers in high‐temperature superconducting materials by the combination of Rutherford backscattering spectrometry and nuclear resonance reaction

2. High-Energy Ion Beam Analysis of YBa2Cu3OxThin Films

3. Elastic Scattering of Alpha-Particles by Oxygen

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scattering methods;Instrumental Multi-Element Chemical Analysis;1998

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