1. Ion Implantation Technology;Simonton,1992
2. Channeling of ions near the silicon 〈001〉 axis
3. NV-6200AV, Eaton SED, 2433 Rutland Dr., Austin, TX, 78758, USA.
4. Boron implant profile variation across a single wafer due to electrostatic scanning
5. TP-300, Therma-Wave, Inc., 47320 Mission Falls Court, Fremont, CA, 94539, USA.