High Miller index channeling in silicon substrates

Author:

Simonton Robert B.,Magee Charles W.,Tasch Al F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Ion Implantation Technology;Simonton,1992

2. Channeling of ions near the silicon 〈001〉 axis

3. NV-6200AV, Eaton SED, 2433 Rutland Dr., Austin, TX, 78758, USA.

4. Boron implant profile variation across a single wafer due to electrostatic scanning

5. TP-300, Therma-Wave, Inc., 47320 Mission Falls Court, Fremont, CA, 94539, USA.

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1. A study of ion channeling patterns at minor axes in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-07

2. SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing;Applied Surface Science;2003-05

3. Critical angles and low-energy limits to ion channeling in silicon;Radiation Effects and Defects in Solids;1996-01

4. Using a wedge oxide to monitor low energy beam purity by means of therma-wave measurements in the Eaton NV-8200P ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

5. Beam energy purity in the Eaton NV-8200P ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

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