Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
2. Metallization by ionized cluster beams;Yamada;IEEE Trans. Electron. Devices EDL-34,1987
3. Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beam
4. Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition
5. Direct observation of an incommensurate solid-solid interface
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