Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beam-Reference-Cited by-同舟云学术

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Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beam

Published:1989-12 Issue:1-4 Volume:43 Page:23-31
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yamada Isao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Proc. 2nd Intern. Conf. on Ion Sources;Takagi,1972

2. Ionized-Cluster Beam Deposition and Epitaxy;Takagi,1988

3. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam

4. Low temperature epitaxy by ionized‐cluster beam

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