XPS Spectra of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

Abstract

The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface properties and atomic binding energy of Cu thin films were studied by X-ray Photoelectron Spectroscopy (XPS). The results show that for all XPS spectra of Cu/SiO2/Si (111) samples deposited by neutral cluster and ionized cluster beam (Va=5 kV), the atomic binding energy of the films was no differences with bulk materials. The reason may be that the local energy deposition and atomic restructuring caused by surface treatment process resulting in the XPS spectra of the copper films was similar with bulk standard copper.