High energy P implants in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference26 articles.
1. The EXTRION 220 parallel scan magnet
2. Range distributions of MeV implants in silicon
3. Profile studies of MeV ions implanted into Si
4. Range distributions of MeV implants in silicon II
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Doping of Silicon with Phosphorus Using the30Si(p, γ)31P Resonant Nuclear Reaction;physica status solidi (a);1999-12
2. Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si;Journal of Applied Physics;1997-12-15
3. Crystal-binary collision simulation of atomic collisions and dynamic damage buildup in crystalline silicon;Radiation Effects and Defects in Solids;1994-07
4. Crystal-trim and its application to investigations on channeling effects during ion implantation;Radiation Effects and Defects in Solids;1994-07
5. Computer simulation of channeling implantation at high and medium energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
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