Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity-Reference-Cited by-同舟云学术

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Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity

Published:1984-02 Issue:2-3 Volume:1 Page:427-430
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Goltzene A.,Meyer B.,Schwab C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Electron radiation damage in semiconductors and metals;Corbett,1966

2. Irradiation damage to solids;Kelly,1966

3. Irradiation in crystalline solids;Gittus,1978

4. Inst. Phys. Conf. Ser. No. 46;Bedde,1979

5. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR

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1. PAC investigation of implanted semiconductors;Hyperfine Interactions;1990-08

2. Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods;Isotopenpraxis Isotopes in Environmental and Health Studies;1989-01

3. Quadrupole coupling constants of AIIBVI compounds with wurtzite structure;Hyperfine Interactions;1988-01

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