Simulation of doping of deep trenches by ion implantation-Reference-Cited by-同舟云学术

Simulation of doping of deep trenches by ion implantation

Published:1990-02 Issue:4 Volume:44 Page:453-458
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Saler S.,Kassing R.,Kakoschke R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Trench transistor cell with self-aligned contact (TSAC) for megabit MOS DRAM;Yanagisawa,1986

2. A high density 4M DRAM process using folded bitline adaptive side-wall isolated capacitor (FASIC) cell;Nagamoto,1986

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1. Ultra deep trench doping in silicon by grazing incident boron implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

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5. Investigation of backscattering and re-implantation during ion implantation into deep trenches;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04