Formation of excellent shallow n+ junctions by As+ implantation into thin CoSi films on Si substrate
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Generalized guide for MOSFET miniaturization
2. Suicides for VLSI Applications;Murarka,1983
3. Refractory metal silicides: Thin-film properties and processing technology
4. VLSI Science and Technology;Osburn,1982
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1. Formation of Shallow p+n Junctions Using Different Annealing Schemes with Low Thermal Budget;Japanese Journal of Applied Physics;2000-03-01
2. Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation;Solid-State Electronics;1999-09
3. Formation of palladium-silicided shallow n+p junctions by phosphorus implantation into thin Pd or Pd2Si films on a silicon substrate and subsequent anneal;Solid-State Electronics;1999-07
4. Formation of NiSi-silicided shallow p+n junctions by BF2+ implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal;Solid-State Electronics;1998-11
5. Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02
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