Electrical characterization of thin film SIMOX structures-Reference-Cited by-同舟云学术

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Electrical characterization of thin film SIMOX structures

Published:1993-04 Issue:1-2 Volume:74 Page:218-221
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhu Wenhua ,Lin Chenglu ,Shi Zuoyu ,Zou Shichang ,Hemment P.L.F.,Nejim A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Thin-film SOI devices: A perspective

2. Silicon-on-insulator by oxygen implantation: An advanced technology

3. New trends in SIMOX

4. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

5. SIMOX: Buried layer formation by ion implantation — Equipment and techniques

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference;Applied Optics;2002-07-01

2. Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy;Journal of The Electrochemical Society;2001

3. Optical characterization of doped SIMOX structures using FTIR spectroscopy;Microelectronic Engineering;1995-06

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