Silicon-on-insulator by oxygen implantation: An advanced technology-Reference-Cited by-同舟云学术

Silicon-on-insulator by oxygen implantation: An advanced technology

Published:1988-12 Issue:3-4 Volume:8 Page:149-161
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bruel M.,Margail J.,Jaussaud C.,Auberton-Hervé A.J.,Stoemenos J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Electromagnetically Enriched Isotopes and Mass Spectroscopy;Smith,1956

2. Formation of SiO2 films by oxygen-ion bombardment;Watanabe;J. Appl. Phys.,1966

3. Epitaxial silicon layers growth on ion-implanted silicon nitride layers;Dexter;Appl. Phys. Lett.,1973

4. A study of oxygen oxides prepared by oxygen implantation into silicon;Badawi;J. Phys.,1977

5. CMOS devices fabricated on buried SiO2 layers by oxygen implantation into silicon;Izumi;Electron. Lett.,1978

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