Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTA-Reference-Cited by-同舟云学术

Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTA

Published:1994-05 Issue:1-4 Volume:89 Page:362-368
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Markwitz A.,Baumann H.,Grill W.,Knop A.,Krimmel E.F.,Bethge K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

3. Plasma Deposited Thin Films;Mort,1986

4. 13th General Conf. EPS;Markwitz,1993

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