Author:
Scanlon P.J.,Ridgway M.C.,Brongersma H.H.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Assessing boron quantification and depth profiling of different boride materials using ion beams;Surface and Coatings Technology;2021-07
2. Characterization of low-energy (100 eV–10 keV) boron ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
3. Boron depth profiles in silicon and simulation of α-spectra;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-01
4. Analysis of boron by charged particle bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03