Effect of ion-beam mixing temperature on cobalt silicide formation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Semiconductor International;Gupta,1989
2. Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSL
3. Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique
4. Radiation-enhanced diffusion during high-temperature ion implantation
5. T-DYN Monte Carlo simulations applied to ion assisted thin film processes
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