Author:
Simionescu A.,Hobler G.,Bogen S.,Frey L.,Ryssel H.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
11 articles.
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1. Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si;Journal of Materials Research;2010-05
2. Ion Implantation;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
3. Random and channeling stopping power of H in Si below 100keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
4. High-accuracy simulation method for CCD image sensors below 2.5-μm square cell size;SPIE Proceedings;2004-06-07
5. On the dechanneling of protons in Si [110];The European Physical Journal B - Condensed Matter;2003-08-01