On the dechanneling of protons in Si [110]-Reference-Cited by-同舟云学术

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On the dechanneling of protons in Si [110]

Published:2003-08-01 Issue:3 Volume:34 Page:257-263
ISSN:1434-6028
Container-title:The European Physical Journal B - Condensed Matter
language:
Short-container-title:The European Physical Journal B - Condensed Matter

Author:

Kokkoris M.,Perdikakis G.,Kossionides S.,Petrovic S.,Simoen E.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1140/epjb/e2003-00219-y.pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical simulation of proton backscattering spectra in GEANT4 toolkit;Lithuanian Journal of Physics;2024-02-23

2. Simulation of large angle backscattering spectra of channeled protons in Geant4;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-10

3. The study of channeling parameters of protons along axial and planar directions of Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-03

4. The quantitative 6H-SiC crystal damage depth profiling;Journal of Nuclear Materials;2021-11

5. Influence of nuclear multiple scattering on axially channeled protons in a bent crystal;Nuclear Technology and Radiation Protection;2018

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