Range profiles of medium and heavy ions implanted into SiO2
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Ion Implantation Techniques;Biersack,1982
2. Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon
3. Determination of the range profiles of boron implanted into Si and SiO2
4. Range Distribution of Implanted Arsenic in Silicon Dioxide
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