High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN-Reference-Cited by-同舟云学术

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High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN

Published:1996-09 Issue:1-4 Volume:118 Page:743-747
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Shima Takayuki,Kimura Shinji,Iida Tsutomu,Obara Akira,Makita Yunosuke,Kudo Kazuhiro,Tanaka Kuniaki

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Proc. 8th Int. Conf. on Molecular Beam Epitaxy;Kondow,1994

3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

4. Hydride VPE Growth of GaAs for FET's

5. Nitride film formation by ion and vapour deposition

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation;Nano Express;2020-08-04

2. Temperature stable 13 μm emission from GaAs;Optics Express;2012-11-02

3. Investigation of indium diffusion process in In+ ion implanted GaAs;Vacuum;2007-06

4. Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures;Journal of Applied Physics;2002-10

5. Structural changes induced by fast nitrogen ions in GaAs single crystals;Journal of Alloys and Compounds;2001-10

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