In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Surface and Depth Analysis Based on Sputtering;Wittmaack,1991
2. The determination of high-dose implantation profiles using low-angle Rutherford backscattering
3. Comparison of the retention characteristics of low-energy xenon and caesium implanted in silicon
4. In situ RBS analysis of ion beam mixing during low energy sputtering
5. Ion beam induced modification of Si-based materials during sputter profiling;De Coster,1995
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1. Cesium/Xenon dual beam sputtering in a Cameca instrument;Surface and Interface Analysis;2014-09-22
2. Cs incorporation in semiconductors during low-energy bombardment: A dynamic computer simulation study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09
3. The effect of oxygen during irradiation of silicon with low energy Cs+ ions;Journal of Applied Physics;2009-08
4. Cesium near-surface concentration in low energy, negative mode dynamic SIMS;Applied Surface Science;2008-12
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