Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2-Reference-Cited by-同舟云学术

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Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2

Published:1995-12 Issue:1-4 Volume:106 Page:364-371
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Reeson K.J.,Finney M.S.,Harry M.A.,Hutchinson S.V.,Tan Y.S.,Leong D.,Bearda T.R.,Yang Z.,Curello G.,Homewood K.P.,Gwilliam R.M.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference47 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

2. The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications;Journal of Applied Physics;2023-07-11

2. Formation of Fe-Co-Si Structure in Fe and Co Implanted Si Substrate;MRS Advances;2017-03-23

3. Room temperature 1.5 μm light-emitting silicon diode with embedded β-FeSi2 nanocrystallites;Applied Physics Letters;2012-10-15

4. Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applications;Semiconductor Science and Technology;2012-01-31

5. Synthesis of β-FeSi2/Si heterojunctions for photovoltaic applications by unbalanced magnetron sputtering;Thin Solid Films;2007-11

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