IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface;Rigo,1988
3. An 18O Study of the Oxidation Mechanism of Silicon in Dry Oxygen
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1. Reaction–diffusion in high-k dielectrics on Si;Surface Science Reports;2003-02
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits;Journal of Applied Physics;2001-09
3. Ion Beam Studies of Silicon Oxidation and Oxynitridation;Fundamental Aspects of Silicon Oxidation;2001
4. Atomic transport during growth of ultrathin dielectrics on silicon;Surface Science Reports;1999-12
5. Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) inO2;Physical Review B;1999-07-15
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