Trace surface analysis: 30 ppb analysis with removal of less than a monolayer. Fe and Ti impurities in the first atomic layer of Si wafers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
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1. Signals of secondary ions and resonantly and nonresonantly ionized neutrals sputtered from binary alloys as a function of oxygen exposure;Surface and Interface Analysis;2012-04-25
2. Matrix effect-free depth profiling of implanted Mg in Al x Ga1-x As/GaAs multi-layers by resonance enhanced multiphoton laser post-ionization sputtered neutral mass spectrometry;Surface and Interface Analysis;2012-02-24
3. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01
4. Two types of ion gun equipped sputter-initiated resonant ionization and time-of-flight mass spectroscopy and its application in microanalysis of minerals;Review of Scientific Instruments;1998-03
5. Emission of Na atoms from undamaged and slightly damaged NaCl (100) surfaces by electronic excitation;Physical Review B;1994-02-15
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