The sputtering of InP with 3 keV to 10 keV Ar- and O2-ions under various angles
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Ion beam milling of InP with an Ar/O2‐gas mixture
2. Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardment
3. Reactive ion beam etching of InP with Cl2
4. A penning type ion source with high efficiency and some applications
5. Undistorted measurements of differential sputtering yields using the collector method by means of electron backscattering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV;Technical Physics;1997-06
2. Argon bombardment-induced topography development on InP;Surface and Interface Analysis;1994-07
3. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
4. Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields;Critical Reviews in Solid State and Materials Sciences;1994-01
5. Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-05
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