Argon bombardment-induced topography development on InP
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. The topography of sputtered semiconductors
2. Radiation-induced sample modification in surface analysis: InP as an extreme example
3. Synergetic effects during sputter-assisted depth profiling: Growth-dominated topography development on InP and a model of the atomic mechanism
4. Sudden surface roughening followed by levelling observed in SIMS analysis of InP-containing III-V multilayers
5. Composition and structure of ion-bombardment-induced growth cones on InP
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1. Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12
2. Influence of surface topography on the secondary electron yield of clean copper samples;Micron;2016-11
3. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
4. Bombardment-induced ripple topography on GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12
5. Pyramid formation on a high index copper bicrystal during bombardment with 10 keV argon and krypton ions;Applied Surface Science;2000-10
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