Silicon-on-insulator structures by SIMOX and SIMNI procedures studied by Raman scattering and Rutherford backscattering-Reference-Cited by-同舟云学术

Silicon-on-insulator structures by SIMOX and SIMNI procedures studied by Raman scattering and Rutherford backscattering

Published:1989-03 Issue:1-4 Volume:39 Page:400-404
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Takai M.,Ryssel H.,Schork R.,Ueyama N.,Minamisono T.,Namba S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Semiconductor-on-Insulator and Thin Film Transistor Technology,1986

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04

3. Optical characterisation of SIMOX structures formed by successive implantation and annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02