Modification of magnetron sputtered a-Si1−xCx:H films by implantation of Ge+
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Crystalline-amorphous contrast formation in thermally crystallized SiC
2. Development of a high-brightness gas field-ionization source
3. Annealing temperature dependence of conductivity in a-CSiGe:H alloys deposited at different substrate temperatures
4. X‐ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H films
5. Electron spectroscopic identification of carbon species formed during diamond growth
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1. Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving;Multilayer Thin Films - Versatile Applications for Materials Engineering;2020-01-15
2. Surface characterisation of Ga+ion implanted ta-C thin films;Journal of Physics: Conference Series;2017-01
3. Modification of the Optical and Structural Properties of a-Si1-XCX:H Films by Ion Implantation;Functional Properties of Nanostructured Materials;2006
4. Structural and optical properties modification of a-SiC:H by Ga+ ion implantation;Vacuum;2003-03
5. RBS and optical studies of ion-implanted amorphous silicon carbide layers;Vacuum;2003-03
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