Recoil implantation and interface mixing: A computer simulation study
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Mechanism of ion beam induced mixing of layered solids
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5. Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulation
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1. Effect of Al ion implantation on the adhesion of Al films to SiO2 substrates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-09
2. Molecular dynamics simulations of ion beam mixing of Mo-on-Si bilayers;Physica Status Solidi (a);1994-04-16
3. Molecular dynamics simulations of the intermixing of a metallic heterostructure irradiated at near-threshold energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-12
4. The activation energy of electrical conduction of ion beam mixed Sb/n-Si Schottky contacts;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
5. An overview of the transport theory of charged particles;Radiation Physics and Chemistry;1993-04
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