MeV energy implantation of Fe in InP
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Ion implantation for isolation of III-V semiconductors
2. Depth profiles of Fe and Cr implants in InP after annealing
3. Annealing behavior of ion‐implanted Fe in InP
4. Defect‐induced redistribution of Fe‐ or Ti‐implanted and annealed GaAs, InAs, GaP, and InP
5. MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Redistribution of Ni implanted into InP;The European Physical Journal Applied Physics;2001-02
2. Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP;Journal of Applied Physics;1999-01-15
3. High-energy Ni implantation in InP;Journal of Materials Science Letters;1998
4. Dose and Doping Dependence of Damage Annealing in Fe Mev Implanted Inp;MRS Proceedings;1995
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