Author:
Ishikawa Yukari,Shibata Noriyoshi
Subject
Instrumentation,Nuclear and High Energy Physics
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6 articles.
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1. Investigation of defects in reactive ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-07
2. Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12
3. Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization);Materials Science and Engineering: B;2002-04
4. Structural studies of 20 keV oxygen-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-08
5. ESR characterization of the top Si layer of ion implanted SIMOX;Applied Surface Science;2000-06