Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Nitrogen‐Implanted Aluminum for Planarized Insulation
2. Investigation of thin AIN films for piezolayer-field effect transistor applications
3. Computer simulations and transmission electron microscopy investigations of nitrogen implanted into aluminium at high temperature
4. Segregation of Cu impurity in aluminium on silicon during high-dose nitrogen-ion implantation
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1. Study of low energy high dose nitrogen implantation in aluminium, iron, copper and gold;Surface and Interface Analysis;1999-07
2. A study of nitrogen implantation in aluminium—a comparison of experimental results and computer simulation;Applied Surface Science;1999-03
3. Physical techniques for silicon layer analysis;Microelectronic Engineering;1998-11
4. Magnetron sputtering of aluminium using oxygen or nitrogen as reactive gas;Thin Solid Films;1998-07
5. Plasma immersion ion implantation of pure aluminium at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
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