Room temperature interaction of ionised nitrogen with cleaved GaAs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. Effect of native oxide on the interface property of GaAs MIS structures
2. Interactions between H2and N2plasmas and a GaAs(100) surface: Chemical and electronic properties
3. Etude par photoémission de la passivation de GaAs en plasmas multipolaires d'azote et d'hydrogène
4. Semiconductor surface structures
5. Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study;Applied Surface Science;1993-03
2. GaP, GaAs, and InP nitridation at room temperature by N2 adsorption on (110) surfaces modified by alkali metals;Surface Science;1992-05
3. Photoinduced oxynitride formation on semiconductors: NO on Si(111)2 × 1;Applied Surface Science;1992-01
4. Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature;Applied Surface Science;1992-01
5. Unmonochromatized synchrotron radiation promoted silicon oxynitridation at room temperature;Journal of Applied Physics;1991-08-15
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