Laser cleaned silicon surfaces—electronic structure and surface crystallography
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference15 articles.
1. Atomically clean semiconductor surfaces prepared by laser irradiation
2. The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium
3. Angle-resolved photoemission and valence band dispersions for GaAs: Direct vs indirect models
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. KrF-excimer-laser-induced native oxide removal from Si (100) surfaces studied by Auger electron spectroscopy;Applied Physics A Materials Science and Processing;1996-02
2. Excimer laser cleaning of Si(100) surfaces at 193 and 248 nm studied by LEED, AES and XPS spectroscopies;Journal of Electron Spectroscopy and Related Phenomena;1995-12
3. Mechanisms of excimer laser cleaning of air‐exposed Si(100) surfaces studied by Auger electron spectroscopy, electron energy‐loss spectroscopy, reflection high‐energy electron diffraction, and secondary‐ion mass spectrometry;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-03
4. Surface Science and Electronic Materials. An Overview;Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis;1988
5. Chapter Surface Studies of Pulsed Laser Irradiated Semiconductors;Semiconductors and Semimetals;1984
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