Removal of damage in ion-implanted GaInAs

Author:

Shahid MA,Anjum M,Sealy BJ,Gill SS,Marsh HJ

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10

2. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03

3. The properties of annealed Se +-implanted GaInAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03

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