Low power laser annealing of disordered semiconductors
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference20 articles.
1. Structural characterization of dynamic annealing effects of P+ implanted Si;Berti,1985
2. Physical and electrical properties of laser‐annealed ion‐implanted silicon
3. Solid‐phase epitaxy of implanted silicon by cw Ar ion laser irradiation
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2. Detection of binary phases in CuInSe2 films formed by laser annealing of stacked elemental layers of In, Cu and Se;Journal of Materials Science;1996
3. Laser‐induced structural modifications of glassy carbon surfaces;Journal of Applied Physics;1995-05
4. Laser-damage threshold studies and microstructural analysis of amorphous germanium thin films;Journal of Materials Science Letters;1995-01
5. RHEED and RBS analysis of low-power laser annealed GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
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