Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference11 articles.
1. Angle-resolved photoemission from Si(100): Identification of bulk band transitions
2. General comparison of the surface processes involved in nitridation of Si(100)-2×1byNH3and inSiNxfilm deposition: a photoemission study
3. Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces
4. Initial stage of thermal oxidation of the Si(111)-(7×7) surface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth Mode and Characteristics of the O2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement;Japanese Journal of Applied Physics;1998-01-15
2. Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy;Applied Surface Science;1996-07
3. Energy spectroscopy studies of radiation-induced damaged surfaces and interfaces in SiO2/Si by light charged particles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-09
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