General comparison of the surface processes involved in nitridation of Si(100)-2×1byNH3and inSiNxfilm deposition: a photoemission study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.13113/fulltext
Reference33 articles.
1. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature
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3. Study of atomic transport mechanisms during thermal nitridation of silicon in ammonia using 15N and D labelled gas
4. A study of the nitridation of silicon surfaces by low-energy electron diffraction and auger electron spectroscopy
5. Amino species on the Si(111)(7×7) surface—Observation by vibrational EELS
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