Dc-etching of poly-silicon with fluorine chemistry
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage
3. Chemical sputtering yields of silicon resulting from F+, CFn+ (n= 1,2,3) ion bombardment
4. The Effects of Arsenic Doping in Reactive Ion Etching of Silicon in Chlorinated Plasmas
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diagnostics of the magnetized low‐pressure hydrogen plasma jet: Molecular regime;Journal of Applied Physics;1996-08
2. Silicon etching in a direct current glow discharge of CF4/O2 and NF3/O2;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11
3. Hot Electrons in an Expanding Magnetized Hydrogen Plasma;Electron Kinetics and Applications of Glow Discharges
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