The effect of discharge conditions on the inductively coupled plasma oxidation of silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference14 articles.
1. Silicon Oxidation in an Oxygen Plasma Excited by Microwaves
2. Plasma oxidation of silicon
3. Theory of the growth of SiO2 in an oxygen plasma
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2. Oxidation of silicon nitride films in an oxygen plasma;Journal of Applied Physics;1999-03-15
3. Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma;IEEE Transactions on Plasma Science;1998
4. A review of the plasma oxidation of silicon and its applications;Semiconductor Science and Technology;1993-07-01
5. Improved electrical properties of silicon dioxide films for MOS gate dielectrics grown in an inductively coupled r.f. plasma;Thin Solid Films;1992-11
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